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PSMN3R3-80BS,118

PSMN3R3-80BS,118

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Nexperia USA Inc.

MOSFETS NEXTPOWER 80 V, 3.1 MOHM, 160 A, N-CHANNEL MOSFET IN LFPAK56 PACKAGE

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PSMN3R3-80BS,118

PSMN3R3-80BS,118

Active
Nexperia USA Inc.

MOSFETS NEXTPOWER 80 V, 3.1 MOHM, 160 A, N-CHANNEL MOSFET IN LFPAK56 PACKAGE

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Description

General part information

PSMN3R3 Series

118 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies.

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN3R3-80BS,118
Current - Continuous Drain (Id) (Tc)120 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)111 nC
Input Capacitance (Ciss) (Max)8161 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NameD2PAK
Power Dissipation (Max)306 W
Rds On (Max)3.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

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