PSMN3R3 Series

N-channel 40 V, 3.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

Catalog

N-channel 40 V, 3.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

Part	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	Rds On (Max)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Vgs(th) (Max)	FET Type	Package / Case	Package Name	Gate Charge (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
Nexperia USA Inc. PSMN3R3-80BS,118	-55 °C	175 °C	120 A	80 V	20 V	10 V	Surface Mount	MOSFET (Metal Oxide)	3.5 mOhm	8161 pF	306 W	4 V	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	111 nC
Nexperia USA Inc. PSMN3R3-60PLQ	-55 °C	175 °C	130 A	60 V	20 V		Through Hole	MOSFET (Metal Oxide)	3.4 mOhm	10115 pF	293 W	2.1 V	N-Channel	TO-220-3	TO-220AB	95 nC	10 V	4.5 V
Nexperia USA Inc. PSMN3R3-40MSHX	-55 °C	175 °C	118 A	40 V	20 V	10 V	Surface Mount	MOSFET (Metal Oxide)	3.3 mOhm	3063 pF 3063 pF	101 W	3.6 V	N-Channel	8-LFPAK33 (5-Lead) SOT-1210	LFPAK33	42 nC
Nexperia USA Inc. PSMN3R3-40MLHX	-55 °C	175 °C	118 A	40 V	20 V		Surface Mount	MOSFET (Metal Oxide)	3.3 mOhm	3794 pF	101 W	2.15 V	N-Channel	8-LFPAK33 (5-Lead) SOT-1210	LFPAK33	54 nC	10 V	4.5 V

Catalog

N-channel 40 V, 3.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

Description

118 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies.