Specification	PSMN3R7-25YLC,115

Current - Continuous Drain (Id) (Tc)	97 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	21.6 nC
Input Capacitance (Ciss) (Max)	1585 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	64 W
Rds On (Max)	3.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	1.95 V

PSMN3 Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	FET Type	Power Dissipation (Max)	Rds On (Max)	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Mounting Type	Gate Charge (Max)	Technology	Package Name	Package Width	Package Length	Input Capacitance (Ciss) (Max)
NXP USA Inc. PSMN3R5-30LL,115	-55 °C	150 °C	20 V	40 A	N-Channel	71 W	3.6 mOhm	8-VDFN Exposed Pad	10 V	4.5 V	30 V	2.15 V	Surface Mount	37 nC 37 nC	MOSFET (Metal Oxide)	8-DFN3333	3.3 mm	3.3 mm	2061 pF
NXP USA Inc. PSMN3R2-25YLC,115	-55 °C	175 °C	20 V	100 A	N-Channel	79 W	3.4 mOhm	SC-100 SOT-669	10 V	4.5 V	25 V	1.95 V	Surface Mount	30 nC	MOSFET (Metal Oxide)	LFPAK56 Power-SO8			1781 pF
NXP USA Inc. PSMN3R7-25YLC,115	-55 °C	175 °C	20 V	97 A	N-Channel	64 W	3.9 mOhm	SC-100 SOT-669	10 V	4.5 V	25 V	1.95 V	Surface Mount	21.6 nC	MOSFET (Metal Oxide)	LFPAK56 Power-SO8			1585 pF
NXP USA Inc. PSMN3R5-80ES,127

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