PSMN3 Series
Manufacturer: NXP USA Inc.
Beta
⌘K
MOSFET N-CH 30V 40A 8DFN
| Part | Operating Temperature (Min) | Operating Temperature (Max) | Vgs (Max) | Current - Continuous Drain (Id) (Tc) | FET Type | Power Dissipation (Max) | Rds On (Max) | Package / Case | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) | Mounting Type | Gate Charge (Max) | Technology | Package Name | Package Width | Package Length | Input Capacitance (Ciss) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 NXP USA Inc. | -55 °C | 150 °C | 20 V | 40 A | N-Channel | 71 W | 3.6 mOhm | 8-VDFN Exposed Pad | 10 V | 4.5 V | 30 V | 2.15 V | Surface Mount | 37 nC 37 nC | MOSFET (Metal Oxide) | 8-DFN3333 | 3.3 mm | 3.3 mm | 2061 pF |
 NXP USA Inc. | -55 °C | 175 °C | 20 V | 100 A | N-Channel | 79 W | 3.4 mOhm | SC-100 SOT-669 | 10 V | 4.5 V | 25 V | 1.95 V | Surface Mount | 30 nC | MOSFET (Metal Oxide) | LFPAK56 Power-SO8 | 1781 pF | ||
NXP USA Inc. | -55 °C | 175 °C | 20 V | 97 A | N-Channel | 64 W | 3.9 mOhm | SC-100 SOT-669 | 10 V | 4.5 V | 25 V | 1.95 V | Surface Mount | 21.6 nC | MOSFET (Metal Oxide) | LFPAK56 Power-SO8 | 1585 pF | ||
 NXP USA Inc. |