IMZA65R027M1HXKSA1

NRND

INFINEON

COOLSIC™ MOSFET 650 V – SIC MOSFET DELIVERING RELIABLE AND COST-EFFECTIVE PERFORMANCE IN TO247 4-PIN PACKAGE

Find alt

Alpha

IMZA65R027M1HXKSA1

NRND

INFINEON

COOLSIC™ MOSFET 650 V – SIC MOSFET DELIVERING RELIABLE AND COST-EFFECTIVE PERFORMANCE IN TO247 4-PIN PACKAGE

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

IMZA65 Series

CoolSiC™ MOSFETtechnology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device’s performance, robustness, and ease of use. The IMZA65R027M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both thelowest losses in the applicationand thehighest reliability in operation. Infineon’s SiC MOSFET in TO247 4-pin package reduces parasitic source inductance effects on the gate circuit enabling faster switching and increased efficiency.

Technical Specifications

Parameters and characteristics for this part

Specification	IMZA65R027M1HXKSA1

Current - Continuous Drain (Id) (Tc)	59 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Max)	63 nC
Input Capacitance (Ciss) (Max)	2131 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-4
Package Name	PG-TO247-4-3
Power Dissipation (Max)	189 W
Rds On (Max)	34 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-5 V
Vgs (Max) Positive	23 V
Vgs(th) (Max)	5.7 V

IMZA65 Series

Part	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Package Name	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Technology	Rds On (Max)	Gate Charge (Max)	FET Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max) Negative	Vgs (Max) Positive
INFINEON IMZA65R048M1HXKSA1	TO-247-4	-55 °C	150 °C	5.7 V	PG-TO247-4-3	18 V	1118 pF	39 A	SiCFET (Silicon Carbide)	64 mOhm	33 nC	N-Channel	125 W	650 V	Through Hole	-5 V	23 V
INFINEON IMZA65R027M1HXKSA1	TO-247-4	-55 °C	150 °C	5.7 V	PG-TO247-4-3	18 V	2131 pF	59 A	SiCFET (Silicon Carbide)	34 mOhm	63 nC	N-Channel	189 W	650 V	Through Hole	-5 V	23 V
INFINEON IMZA65R072M1HXKSA1	TO-247-4	-55 °C	150 °C	5.7 V	PG-TO247-4-3	18 V	744 pF	28 A	SiCFET (Silicon Carbide)	94 mOhm	22 nC	N-Channel	96 W	650 V	Through Hole	-5 V	23 V
INFINEON IMZA65R107M1HXKSA1	TO-247-3	-55 °C	150 °C	5.7 V	PG-TO247-3-41	18 V	496 pF	20 A	SiCFET (Silicon Carbide)	142 mOhm	15 nC	N-Channel	75 W	650 V	Through Hole	-5 V	23 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Datasheet

IMZA65R027M1HXKSA1 | Datasheet