IMZA65 Series

Manufacturer: INFINEON

Catalog

COOLSIC™ MOSFET 650V – SIC MOSFET DELIVERING RELIABLE AND COST-EFFECTIVE PERFORMANCE IN TO247 4-PIN PACKAGE

Part	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Package Name	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Technology	Rds On (Max)	Gate Charge (Max)	FET Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max) Negative	Vgs (Max) Positive
INFINEON IMZA65R048M1HXKSA1	TO-247-4	-55 °C	150 °C	5.7 V	PG-TO247-4-3	18 V	1118 pF	39 A	SiCFET (Silicon Carbide)	64 mOhm	33 nC	N-Channel	125 W	650 V	Through Hole	-5 V	23 V
INFINEON IMZA65R027M1HXKSA1	TO-247-4	-55 °C	150 °C	5.7 V	PG-TO247-4-3	18 V	2131 pF	59 A	SiCFET (Silicon Carbide)	34 mOhm	63 nC	N-Channel	189 W	650 V	Through Hole	-5 V	23 V
INFINEON IMZA65R072M1HXKSA1	TO-247-4	-55 °C	150 °C	5.7 V	PG-TO247-4-3	18 V	744 pF	28 A	SiCFET (Silicon Carbide)	94 mOhm	22 nC	N-Channel	96 W	650 V	Through Hole	-5 V	23 V
INFINEON IMZA65R107M1HXKSA1	TO-247-3	-55 °C	150 °C	5.7 V	PG-TO247-3-41	18 V	496 pF	20 A	SiCFET (Silicon Carbide)	142 mOhm	15 nC	N-Channel	75 W	650 V	Through Hole	-5 V	23 V