IXTH200N10T
ActivePOWER MOSFET, N CHANNEL, 100 V, 200 A, 0.0045 OHM, TO-247, THROUGH HOLE
IXTH200N10T
ActivePOWER MOSFET, N CHANNEL, 100 V, 200 A, 0.0045 OHM, TO-247, THROUGH HOLE
Description
General part information
IXTH200 Series
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density
Technical Specifications
Parameters and characteristics for this part
| Specification | IXTH200N10T |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 200 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 152 nC |
| Input Capacitance (Ciss) (Max) | 9400 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247 (IXTH) |
| Power Dissipation (Max) | 550 W |
| Rds On (Max) | 5.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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