Specification	IXTH200N085T

Current - Continuous Drain (Id) (Tc)	200 A
Drain to Source Voltage (Vdss)	85 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	152 nC
Input Capacitance (Ciss) (Max)	7600 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247 (IXTH)
Power Dissipation (Max)	480 W
Rds On (Max)	5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IXTH200 Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Package Name	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	FET Type	Package / Case	Vgs(th) (Max)	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)
LITTELFUSE IXTH200N10T	10 V	200 A	550 W	TO-247 (IXTH)	152 nC	9400 pF	N-Channel	TO-247-3	4.5 V	Through Hole	MOSFET (Metal Oxide)	100 V	5.5 mOhm	-55 °C	175 °C	30 V
LITTELFUSE IXTH200N10T	10 V	200 A	550 W	TO-247 (IXTH)	152 nC	9400 pF	N-Channel	TO-247-3	4.5 V	Through Hole	MOSFET (Metal Oxide)	100 V	5.5 mOhm	-55 °C	175 °C	30 V
LITTELFUSE IXTH200N085T	10 V	200 A	480 W	TO-247 (IXTH)	152 nC	7600 pF	N-Channel	TO-247-3	4 V	Through Hole	MOSFET (Metal Oxide)	85 V	5 mOhm	-55 °C	175 °C	20 V
LITTELFUSE IXTH200N075T	10 V	200 A	430 W	TO-247 (IXTH)	160 nC	6800 pF 6800 pF	N-Channel	TO-247-3	4 V	Through Hole	MOSFET (Metal Oxide)	75 V	5 mOhm	-55 °C	175 °C	20 V

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