TW107N65C,S1F

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SIC MOSFETS G3 650V SIC-MOSFET TO-247 107MOHM

Active

SIC MOSFETS G3 650V SIC-MOSFET TO-247 107MOHM

Description

General part information

SIC MOSFETS G3 650V SIC-MOSFET TO-247 107MOHM

Parameters and characteristics for this part

Specification	TW107N65C,S1F

Current - Continuous Drain (Id) (Tc)	20 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Max)	21 nC
Input Capacitance (Ciss) (Max)	600 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-247-3
Package Name	TO-247
Power Dissipation (Max)	76 W
Rds On (Max)	145 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-10 V
Vgs (Max) Positive	25 V
Vgs(th) (Max)	5 V

Part	Package Name	Power Dissipation (Max)	Rds On (Max)	Operating Temperature	Input Capacitance (Ciss) (Max)	Mounting Type	Vgs (Max) Negative	Vgs (Max) Positive	Gate Charge (Max)	Package / Case	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)	FET Type
Toshiba Semiconductor and Storage TW107N65C,S1F	TO-247	76 W	145 mOhm	175 °C	600 pF	Through Hole	-10 V	25 V	21 nC	TO-247-3	650 V	SiCFET (Silicon Carbide)	20 A	18 V	5 V	N-Channel
Toshiba Semiconductor and Storage TW045N120C,S1F	TO-247	182 W	59 mOhm	175 °C	1969 pF	Through Hole	-10 V	25 V	57 nC	TO-247-3	1200 V	SiCFET (Silicon Carbide)	40 A	18 V	5 V	N-Channel

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