3rd Generation Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
SIC MOSFETS G3 650V SIC-MOSFET TO-247 107MOHM
| Part | Package Name | Power Dissipation (Max) | Rds On (Max) | Operating Temperature | Input Capacitance (Ciss) (Max) | Mounting Type | Vgs (Max) Negative | Vgs (Max) Positive | Gate Charge (Max) | Package / Case | Drain to Source Voltage (Vdss) | Technology | Current - Continuous Drain (Id) (Tc) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | TO-247 | 76 W | 145 mOhm | 175 °C | 600 pF | Through Hole | -10 V | 25 V | 21 nC | TO-247-3 | 650 V | SiCFET (Silicon Carbide) | 20 A | 18 V | 5 V | N-Channel |
Toshiba Semiconductor and Storage | TO-247 | 182 W | 59 mOhm | 175 °C | 1969 pF | Through Hole | -10 V | 25 V | 57 nC | TO-247-3 | 1200 V | SiCFET (Silicon Carbide) | 40 A | 18 V | 5 V | N-Channel |