Description
General part information
IR2233 Series
EiceDRIVER™ 1200 Vthree-phasegate driver ICwith typical 0.25 A source and 0.5 A sink currents in DSO-28 lead package forIGBT DicretesandIGBT modules. IR2233S utilizes proprietary 1200 V HVIC and latch immune CMOS technologies which enable a rugged, monolithic construction with integrated protective features such over-current protection, fault reporting, under voltage lockout protection, cross-conduction prevention, independent op amp, shutdown, separate logic and power ground The IR2233S three-phase gate driver is well suited for low- and medium- power designs up to 4 kW or higher power levels with additional external buffer current driver. IR2233S provides high performance drive capability with full protective features for a cost-competitive solution. IR2233S belongs to the1200 V level-shift junction isolated (JI)gate driver family. A 600 V variant is also available,IR2133S.
Technical Specifications
Parameters and characteristics for this part
| Specification | IR2233STRPBF |
|---|---|
| Channel Type | 3-Phase |
| Current - Peak Output (Sink) | 500 mA |
| Current - Peak Output (Source) | 250 mA |
| Driven Configuration | Half-Bridge |
| Fall Time (Typ) | 40 ns |
| Gate Channel | N-Channel |
| Gate Type | IGBT, MOSFET, N-Channel MOSFET |
| High Side Voltage - Max (Bootstrap) | 1.2 kV |
| Input Type | Inverting |
| Logic Voltage - VIH | 2 V |
| Logic Voltage - VIL | 0.8 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 6 |
| Operating Temperature | 125 °C |
| Package Length | 0.295 in |
| Package Name | 28-SOIC |
| Package Width | 7.5 mm |
| Rise Time (Typ) | 90 ns |
| Voltage - Supply (Maximum) | 20 V |
| Voltage - Supply (Minimum) | 10 VDC |
Pricing
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