IR2233 Series
Manufacturer: INFINEON
IC GATE DRVR HALF-BRIDGE 28SOIC
| Part | Gate Type | Channel Type | Number of Drivers | Input Type | Package Name | Current - Peak Output (Sink) | Current - Peak Output (Source) | Voltage - Supply (Minimum) | Voltage - Supply (Maximum) | Gate Channel | Mounting Type | Logic Voltage - VIH | Logic Voltage - VIL | Rise Time (Typ) | Fall Time (Typ) | High Side Voltage - Max (Bootstrap) | Package Width | Package Length | Operating Temperature | Driven Configuration | Package Leads |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | IGBT MOSFET N-Channel MOSFET | 3-Phase | 6 | Inverting | 28-SOIC | 500 mA | 250 mA | 10 VDC | 20 V | N-Channel | Surface Mount | 2 V | 0.8 V | 90 ns | 40 ns | 1.2 kV | 7.5 mm | 0.295 in | 125 °C | Half-Bridge | |
INFINEON | IGBT MOSFET N-Channel MOSFET | 3-Phase | 6 | Inverting | 28-SOIC | 500 mA | 250 mA | 10 VDC | 20 V | N-Channel | Surface Mount | 2 V | 0.8 V | 90 ns | 40 ns | 1.2 kV | 7.5 mm | 0.295 in | 125 °C | Half-Bridge | |
INFINEON | IGBT MOSFET N-Channel MOSFET | 3-Phase | 6 | Inverting | 32 Leads 44-LCC (J-Lead) | 500 mA | 250 mA | 10 VDC | 20 V | N-Channel | Surface Mount | 2 V | 0.8 V | 90 ns | 40 ns | 1.2 kV | 16.58 mm | 16.58 mm | 125 °C | Half-Bridge | 32 Leads |
INFINEON | IGBT MOSFET N-Channel MOSFET | 3-Phase | 6 | Inverting | 28-DIP 28-PDIP | 500 mA | 250 mA | 10 VDC | 20 V | N-Channel | Through Hole | 2 V | 0.8 V | 90 ns | 40 ns | 1.2 kV | 15.24 mm | 0.6 in | 125 °C | Half-Bridge | |
INFINEON | IGBT MOSFET N-Channel MOSFET | 3-Phase | 6 | Inverting | 28-DIP 28-PDIP | 500 mA | 250 mA | 10 VDC | 20 V | N-Channel | Through Hole | 2 V | 0.8 V | 90 ns | 40 ns | 1.2 kV | 15.24 mm | 0.6 in | 125 °C | Half-Bridge | |
INFINEON | IGBT MOSFET N-Channel MOSFET | 3-Phase | 6 | Inverting | 32 Leads 44-LCC (J-Lead) | 500 mA | 250 mA | 10 VDC | 20 V | N-Channel | Surface Mount | 2 V | 0.8 V | 90 ns | 40 ns | 1.2 kV | 16.58 mm | 16.58 mm | 125 °C | Half-Bridge | 32 Leads |
INFINEON | IGBT MOSFET N-Channel MOSFET | 3-Phase | 6 | Inverting | 28-DIP | 500 mA | 250 mA | 10 VDC | 20 V | N-Channel | Through Hole | 2 V | 0.8 V | 90 ns | 40 ns | 1.2 V | 15.24 mm | 0.6 in | 125 °C | Half-Bridge |