IXTI10N60P

Obsolete

IXYS

MOSFET N-CH 600V 10A TO262

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Obsolete

IXYS

MOSFET N-CH 600V 10A TO262

Technical Specifications

Parameters and characteristics for this part

Specification	IXTI10N60P

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds	1610 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	200 W
Rds On (Max) @ Id, Vgs	740 mOhm
Supplier Device Package	TO-262 (I2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Technology	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max)
IXYS IXTI10N60P	MOSFET (Metal Oxide)	740 mOhm	Through Hole	600 V	TO-262 (I2PAK)	10 V	1610 pF	10 A	30 V	32 nC	N-Channel	-55 °C	150 °C	5 V	I2PAK TO-262-3 Long Leads TO-262AA	200 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 10A (Tc) 200W (Tc) Through Hole TO-262 (I2PAK)

Technical documentation and resources