Beta
⌘K
MOSFET N-CH 600V 10A TO262
| Part | Technology | Rds On (Max) @ Id, Vgs | Mounting Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Package / Case | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | MOSFET (Metal Oxide) | 740 mOhm | Through Hole | 600 V | TO-262 (I2PAK) | 10 V | 1610 pF | 10 A | 30 V | 32 nC | N-Channel | -55 °C | 150 °C | 5 V | I2PAK TO-262-3 Long Leads TO-262AA | 200 W |