IRS2112STRPBF

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EICEDRIVER™ 600 V HIGH-SIDE AND LOW-SIDE DRIVER IC WITH TYPICAL 0.29 A SOURCE AND 0.6 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 16W PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: ENABLE, SEPARATE PIN FOR LOGIC GROUND, SHUTDOWN

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IRS2112STRPBF

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INFINEON

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Description Specifications Series Pricing CAD Documents

Description

General part information

IRS2112 Series

600 V High and Low Side Driver IC with typical 0.29 A source and 0.6 A sink currents in 16 Lead SOICWB package for IGBTs and MOSFETs. Also available in 14 Lead PDIP.

Technical Specifications

Parameters and characteristics for this part

Specification	IRS2112STRPBF

Channel Type	Independent
Current - Peak Output (Sink)	600 mA
Current - Peak Output (Source)	290 mA
Driven Configuration	Half-Bridge
Fall Time (Typ)	35 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	9.5 V
Logic Voltage - VIL	6 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.295 in
Package Name	16-SOIC
Package Width	7.5 mm
Rise Time (Typ)	75 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IRS2112 Series

Part	Number of Drivers	Package Name	Gate Channel	Gate Type	Mounting Type	Driven Configuration	Fall Time (Typ)	Rise Time (Typ)	Logic Voltage - VIH	Logic Voltage - VIL	Channel Type	Package Length	Package Width	High Side Voltage - Max (Bootstrap)	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Peak Output (Sink)	Current - Peak Output (Source)	Input Type
INFINEON IRS2112SPBF	2	16-SOIC	N-Channel	IGBT MOSFET N-Channel MOSFET	Surface Mount	Half-Bridge	35 ns	75 ns	9.5 V	6 V	Independent	0.295 in	7.5 mm	600 V	10 VDC	20 V	-40 °C	150 °C	600 mA	290 mA	Non-Inverting
INFINEON IRS2112PBF	2	14-DIP	N-Channel	IGBT MOSFET N-Channel MOSFET	Through Hole	Half-Bridge	35 ns	75 ns	9.5 V	6 V	Independent	0.3 in	7.62 mm	600 V	10 VDC	20 V	-40 °C	150 °C	600 mA	290 mA	Non-Inverting
INFINEON IRS2112STRPBF	2	16-SOIC	N-Channel	IGBT MOSFET N-Channel MOSFET	Surface Mount	Half-Bridge	35 ns	75 ns	9.5 V	6 V	Independent	0.295 in	7.5 mm	600 V	10 VDC	20 V	-40 °C	150 °C	600 mA	290 mA	Non-Inverting
INFINEON IRS2112PBF	2	14-DIP	N-Channel	IGBT MOSFET N-Channel MOSFET	Through Hole	Half-Bridge	35 ns	75 ns	9.5 V	6 V	Independent	0.3 in	7.62 mm	600 V	10 VDC	20 V	-40 °C	150 °C	600 mA	290 mA	Non-Inverting

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IRS2112STRPBF | Datasheet