Specification	IRS2112PBF

Channel Type	Independent
Current - Peak Output (Sink)	600 mA
Current - Peak Output (Source)	290 mA
Driven Configuration	Half-Bridge
Fall Time (Typ)	35 ns
Gate Channel	N-Channel
Gate Type	IGBT, N-Channel MOSFET, MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	9.5 V
Logic Voltage - VIL	6 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.3 in
Package Name	14-DIP
Package Width	7.62 mm
Rise Time (Typ)	75 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IRS2112 Series

Part	Number of Drivers	Package Name	Gate Channel	Gate Type	Mounting Type	Driven Configuration	Fall Time (Typ)	Rise Time (Typ)	Logic Voltage - VIH	Logic Voltage - VIL	Channel Type	Package Length	Package Width	High Side Voltage - Max (Bootstrap)	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Peak Output (Sink)	Current - Peak Output (Source)	Input Type
INFINEON IRS2112SPBF	2	16-SOIC	N-Channel	IGBT MOSFET N-Channel MOSFET	Surface Mount	Half-Bridge	35 ns	75 ns	9.5 V	6 V	Independent	0.295 in	7.5 mm	600 V	10 VDC	20 V	-40 °C	150 °C	600 mA	290 mA	Non-Inverting
INFINEON IRS2112PBF	2	14-DIP	N-Channel	IGBT MOSFET N-Channel MOSFET	Through Hole	Half-Bridge	35 ns	75 ns	9.5 V	6 V	Independent	0.3 in	7.62 mm	600 V	10 VDC	20 V	-40 °C	150 °C	600 mA	290 mA	Non-Inverting
INFINEON IRS2112STRPBF	2	16-SOIC	N-Channel	IGBT MOSFET N-Channel MOSFET	Surface Mount	Half-Bridge	35 ns	75 ns	9.5 V	6 V	Independent	0.295 in	7.5 mm	600 V	10 VDC	20 V	-40 °C	150 °C	600 mA	290 mA	Non-Inverting
INFINEON IRS2112PBF	2	14-DIP	N-Channel	IGBT MOSFET N-Channel MOSFET	Through Hole	Half-Bridge	35 ns	75 ns	9.5 V	6 V	Independent	0.3 in	7.62 mm	600 V	10 VDC	20 V	-40 °C	150 °C	600 mA	290 mA	Non-Inverting

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