Specification	CSD18503Q5AT

Current - Continuous Drain (Id) (Tc)	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	16 nC
Input Capacitance (Ciss) (Max)	2640 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Length	5 mm
Package Name	8-VSONP
Package Width	6 mm
Power Dissipation (Max)	120 W, 3.1 W
Rds On (Max)	4.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.3 V

CSD18503 Series

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.3 mOhm

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Width	Package Name	Package Length	Rds On (Max)	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	FET Type	Vgs (Max)	Technology	Package / Case	Mounting Type	Current - Continuous Drain (Id) (Ta)
Texas Instruments CSD18503Q5AT	3.1 W 120 W	100 A	40 V	16 nC	10 V	4.5 V	6 mm	8-VSONP	5 mm	4.3 mOhm	2640 pF	-55 °C	150 °C	2.3 V	N-Channel	20 V	MOSFET (Metal Oxide)	8-PowerTDFN	Surface Mount
Texas Instruments CSD18503KCS	188 W	100 A	40 V	36 nC 36 nC	10 V	4.5 V		TO-220-3		4.5 mOhm	3150 pF	-55 °C	150 °C	2.3 V	N-Channel	20 V	MOSFET (Metal Oxide)	TO-220-3	Through Hole
Texas Instruments CSD18503KCS	188 W	100 A	40 V	36 nC 36 nC	10 V	4.5 V		TO-220-3		4.5 mOhm	3150 pF	-55 °C	150 °C	2.3 V	N-Channel	20 V	MOSFET (Metal Oxide)	TO-220-3	Through Hole
Texas Instruments CSD18503Q5A	3.1 W 120 W	100 A	40 V	32 nC	10 V	4.5 V	6 mm	8-VSONP	5 mm	4.3 mOhm	2640 pF	-55 °C	150 °C	2.3 V	N-Channel	20 V	MOSFET (Metal Oxide)	8-PowerTDFN	Surface Mount	19 A