SSM3K376R,LF

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Toshiba Semiconductor and Storage

MOSFET N-CH 30V 4A SOT23F

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Toshiba Semiconductor and Storage

MOSFET N-CH 30V 4A SOT23F

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K376R,LF

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	2.2 nC
Input Capacitance (Ciss) (Max) @ Vds	200 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3 Flat Leads
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	56 mOhm
Supplier Device Package	SOT-23F
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	12 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	1 V

Part	Power Dissipation (Max) [Max]	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max) [Max]	Vgs (Max) [Min]
Toshiba Semiconductor and Storage SSM3K376R,LF	2 W	SOT-23-3 Flat Leads	30 V	1 V	4 A	Surface Mount	SOT-23F	MOSFET (Metal Oxide)	N-Channel	200 pF	56 mOhm	1.8 V 4.5 V	150 °C	2.2 nC	12 V	-8 V

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General part information

N-Channel 30 V 4A (Ta) 2W (Ta) Surface Mount SOT-23F

Technical documentation and resources

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