MOSFET N-CH 30V 4A SOT23F
| Part | Power Dissipation (Max) [Max] | Package / Case | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Supplier Device Package | Technology | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) [Max] | Vgs (Max) [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 2 W | SOT-23-3 Flat Leads | 30 V | 1 V | 4 A | Surface Mount | SOT-23F | MOSFET (Metal Oxide) | N-Channel | 200 pF | 56 mOhm | 1.8 V 4.5 V | 150 °C | 2.2 nC | 12 V | -8 V |