DSEI60-10A

Active

IXYS

DIODE GEN PURP 1KV 60A TO247AD

Search across all available documentation for this part.

Active

IXYS

DIODE GEN PURP 1KV 60A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	DSEI60-10A

Current - Average Rectified (Io)	60 A
Current - Reverse Leakage @ Vr	3 mA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	2.3 V

Part	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Supplier Device Package	Speed	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If
IXYS DSEI60-12A	Standard	150 °C	-40 °C	TO-247-2	60 ns	1.2 kV	52 A	TO-247AD	200 mA 500 ns	Through Hole	2.2 mA
IXYS DSEI60-10A	Standard	150 °C	-40 °C	TO-247-2	50 ns	1000 V	60 A	TO-247AD	200 mA 500 ns	Through Hole	3 mA	2.3 V
IXYS DSEI60-06A	Standard	150 °C	-40 °C	TO-247-2	50 ns	600 V	60 A	TO-247AD	200 mA 500 ns	Through Hole	200 µA	1.8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 60A Through Hole TO-247AD

Technical documentation and resources