DSEI60-12A

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IXYS

DIODE GEN PURP 1.2KV 52A TO247AD

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IXYS

DIODE GEN PURP 1.2KV 52A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	DSEI60-12A

Current - Average Rectified (Io)	52 A
Current - Reverse Leakage @ Vr	2.2 mA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	60 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV

Part	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Supplier Device Package	Speed	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If
IXYS DSEI60-12A	Standard	150 °C	-40 °C	TO-247-2	60 ns	1.2 kV	52 A	TO-247AD	200 mA 500 ns	Through Hole	2.2 mA
IXYS DSEI60-10A	Standard	150 °C	-40 °C	TO-247-2	50 ns	1000 V	60 A	TO-247AD	200 mA 500 ns	Through Hole	3 mA	2.3 V
IXYS DSEI60-06A	Standard	150 °C	-40 °C	TO-247-2	50 ns	600 V	60 A	TO-247AD	200 mA 500 ns	Through Hole	200 µA	1.8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 52A Through Hole TO-247AD

Technical documentation and resources