IR2301SPBF

Obsolete

EICEDRIVER™ 600 V HIGH-SIDE AND LOW-SIDE DRIVER IC WITH TYPICAL 0.2 A SOURCE AND 0.35 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 8N PACKAGE AND WORKS WITH MOSFETS.

Find alt

Alpha

IR2301SPBF

Obsolete

INFINEON

EICEDRIVER™ 600 V HIGH-SIDE AND LOW-SIDE DRIVER IC WITH TYPICAL 0.2 A SOURCE AND 0.35 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 8N PACKAGE AND WORKS WITH MOSFETS.

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

IR2301 Series

600 Vhigh and low-sidegate driver ICforIGBTsandMOSFETswith typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package. Also available in 8 Lead PDIP.

Technical Specifications

Parameters and characteristics for this part

Specification	IR2301SPBF

Channel Type	Independent
Current - Peak Output (Sink)	0.35 A
Current - Peak Output (Source)	200 mA
Driven Configuration	Low-Side, High-Side
Fall Time (Typ)	50 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	2.9 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	130 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	5 V

IR2301 Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	High Side Voltage - Max (Bootstrap)	Driven Configuration	Number of Drivers	Channel Type	Package Length	Package Name	Package Width	Gate Channel	Gate Type	Input Type	Logic Voltage - VIL	Logic Voltage - VIH	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Mounting Type	Current - Peak Output (Source)	Current - Peak Output (Sink)	Rise Time (Typ)	Fall Time (Typ)
INFINEON IR2301SPBF	-40 °C	150 °C	600 V	High-Side Low-Side	2	Independent	0.154 in	8-SOIC	3.9 mm	N-Channel	IGBT MOSFET N-Channel MOSFET	Non-Inverting	0.8 V	2.9 V	5 V	20 V	Surface Mount	200 mA	0.35 A	130 ns	50 ns
INFINEON IR2301STRPBF	-40 °C	150 °C	600 V	High-Side Low-Side	2	Independent	0.154 in	8-SOIC	3.9 mm	N-Channel	IGBT MOSFET N-Channel MOSFET	Non-Inverting	0.8 V	2.9 V	5 V	20 V	Surface Mount	200 mA	0.35 A	130 ns	50 ns
INFINEON IR2301PBF	-40 °C	150 °C	600 V	High-Side Low-Side	2	Independent	0.3 in	8-DIP 8-PDIP	7.62 mm	N-Channel	IGBT MOSFET N-Channel MOSFET	Non-Inverting	0.8 V	2.9 V	5 V	20 V	Through Hole	200 mA	0.35 A	130 ns	50 ns
INFINEON 98-0343	-40 °C	150 °C	600 V	Half-Bridge	2	Independent	0.154 in	8-SOIC	3.9 mm	N-Channel	IGBT MOSFET N-Channel MOSFET	Non-Inverting	0.8 V	2.9 V	5 V	20 V	Surface Mount	200 mA	0.35 A	130 ns	50 ns
INFINEON IR2301STR	-40 °C	150 °C	600 V	High-Side Low-Side	2	Independent	0.154 in	8-SOIC	3.9 mm	N-Channel	IGBT MOSFET N-Channel MOSFET	Non-Inverting	0.8 V	2.9 V	5 V	20 V	Surface Mount	200 mA	0.35 A	130 ns	50 ns
INFINEON IR2301	-40 °C	150 °C	600 V	High-Side Low-Side	2	Independent	0.3 in	8-DIP 8-PDIP	7.62 mm	N-Channel	IGBT MOSFET N-Channel MOSFET	Non-Inverting	0.8 V	2.9 V	5 V	20 V	Through Hole	200 mA	0.35 A	130 ns	50 ns
INFINEON IR2301PBF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Datasheet

Technical Data Sheet EN