IR2301 Series
Manufacturer: INFINEON
EICEDRIVER™ 600 V HIGH-SIDE AND LOW-SIDE DRIVER IC WITH TYPICAL 0.2 A SOURCE AND 0.35 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 8N PACKAGE AND WORKS WITH MOSFETS.
| Part | Operating Temperature (Min) | Operating Temperature (Max) | High Side Voltage - Max (Bootstrap) | Driven Configuration | Number of Drivers | Channel Type | Package Length | Package Name | Package Width | Gate Channel | Gate Type | Input Type | Logic Voltage - VIL | Logic Voltage - VIH | Voltage - Supply (Minimum) | Voltage - Supply (Maximum) | Mounting Type | Current - Peak Output (Source) | Current - Peak Output (Sink) | Rise Time (Typ) | Fall Time (Typ) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | -40 °C | 150 °C | 600 V | High-Side Low-Side | 2 | Independent | 0.154 in | 8-SOIC | 3.9 mm | N-Channel | IGBT MOSFET N-Channel MOSFET | Non-Inverting | 0.8 V | 2.9 V | 5 V | 20 V | Surface Mount | 200 mA | 0.35 A | 130 ns | 50 ns |
INFINEON | -40 °C | 150 °C | 600 V | High-Side Low-Side | 2 | Independent | 0.154 in | 8-SOIC | 3.9 mm | N-Channel | IGBT MOSFET N-Channel MOSFET | Non-Inverting | 0.8 V | 2.9 V | 5 V | 20 V | Surface Mount | 200 mA | 0.35 A | 130 ns | 50 ns |
INFINEON | -40 °C | 150 °C | 600 V | High-Side Low-Side | 2 | Independent | 0.3 in | 8-DIP 8-PDIP | 7.62 mm | N-Channel | IGBT MOSFET N-Channel MOSFET | Non-Inverting | 0.8 V | 2.9 V | 5 V | 20 V | Through Hole | 200 mA | 0.35 A | 130 ns | 50 ns |
INFINEON | -40 °C | 150 °C | 600 V | Half-Bridge | 2 | Independent | 0.154 in | 8-SOIC | 3.9 mm | N-Channel | IGBT MOSFET N-Channel MOSFET | Non-Inverting | 0.8 V | 2.9 V | 5 V | 20 V | Surface Mount | 200 mA | 0.35 A | 130 ns | 50 ns |
INFINEON | -40 °C | 150 °C | 600 V | High-Side Low-Side | 2 | Independent | 0.154 in | 8-SOIC | 3.9 mm | N-Channel | IGBT MOSFET N-Channel MOSFET | Non-Inverting | 0.8 V | 2.9 V | 5 V | 20 V | Surface Mount | 200 mA | 0.35 A | 130 ns | 50 ns |
INFINEON | -40 °C | 150 °C | 600 V | High-Side Low-Side | 2 | Independent | 0.3 in | 8-DIP 8-PDIP | 7.62 mm | N-Channel | IGBT MOSFET N-Channel MOSFET | Non-Inverting | 0.8 V | 2.9 V | 5 V | 20 V | Through Hole | 200 mA | 0.35 A | 130 ns | 50 ns |
INFINEON |