APTMC120HR11CT3G

Obsolete

Microsemi Corporation

SIC 2N-CH 1200V 26A SP3

Search across all available documentation for this part.

Obsolete

Microsemi Corporation

SIC 2N-CH 1200V 26A SP3

Technical Specifications

Parameters and characteristics for this part

Specification	APTMC120HR11CT3G

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	26 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Gate Charge (Qg) (Max) @ Vgs [Max]	62 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	950 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SP3
Power - Max [Max]	125 W
Rds On (Max) @ Id, Vgs	98 mOhm
Supplier Device Package	SP3
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	3 V

Part	Mounting Type	Configuration	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
Microsemi Corporation APTMC120HR11CT3G	Chassis Mount	2 N-Channel (Dual)	Silicon Carbide (SiC)	150 °C	-40 °C	125 W	98 mOhm	3 V	1200 V	1.2 kV	950 pF	62 nC	SP3	26 A	SP3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 1200V (1.2kV) 26A (Tc) 125W Chassis Mount SP3

Technical documentation and resources

No documents available