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SIC 2N-CH 1200V 26A SP3
| Part | Mounting Type | Configuration | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Power - Max [Max] | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation | Chassis Mount | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 150 °C | -40 °C | 125 W | 98 mOhm | 3 V | 1200 V | 1.2 kV | 950 pF | 62 nC | SP3 | 26 A | SP3 |