IRLZ24NSTRLPBF

Obsolete

Infineon Technologies

IR MOSFET™ N-CHANNEL MOSFET ; D2PAK TO-263 PACKAGE; 60 MOHM;

Search across all available documentation for this part.

Obsolete

Infineon Technologies

IR MOSFET™ N-CHANNEL MOSFET ; D2PAK TO-263 PACKAGE; 60 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRLZ24NSTRLPBF

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds	480 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3.8 W, 45 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2 V

Part	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies IRLZ24NSTRLPBF	15 nC	18 A	60 mOhm	3.8 W 45 W	N-Channel	480 pF	MOSFET (Metal Oxide)	55 V	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2 V	16 V	Surface Mount	4 V	10 V	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 18A (Tc) 3.8W (Ta), 45W (Tc) Surface Mount D2PAK

Technical documentation and resources