IR MOSFET™ N-CHANNEL MOSFET ; D2PAK TO-263 PACKAGE; 60 MOHM;
| Part | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Technology | Drain to Source Voltage (Vdss) | Supplier Device Package | Package / Case | Vgs(th) (Max) @ Id | Vgs (Max) | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 15 nC | 18 A | 60 mOhm | 3.8 W 45 W | N-Channel | 480 pF | MOSFET (Metal Oxide) | 55 V | D2PAK | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 2 V | 16 V | Surface Mount | 4 V | 10 V | -55 °C | 175 ░C |