Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | SN74LVC1G00DCKJ | 74LVC1G00 Series |
|---|---|---|
| - | - | |
| Current - Output High, Low [custom] | 32 mA | 32 mA |
| Current - Output High, Low [custom] | 32 mA | 32 mA |
| Current - Quiescent (Max) [Max] | 10 µA | 10 µA |
| Input Logic Level - High [Max] | 2 V | 2 V |
| Input Logic Level - High [Min] | 1.7 V | 1.7 V |
| Input Logic Level - Low [Max] | 0.8 V | 0.8 V |
| Input Logic Level - Low [Min] | 0.7 V | 0.7 V |
| Logic Type | NAND Gate | NAND Gate |
| Max Propagation Delay @ V, Max CL | 4.3 ns | 4 - 5 ns |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Circuits | 1 | 1 |
| Number of Inputs | 2 | 2 |
| Operating Temperature [Max] | 125 °C | 85 - 125 °C |
| Operating Temperature [Min] | -40 °C | -55 - -40 °C |
| Package / Case | 5-TSSOP, SOT-353, SC-70-5 | 6-UFDFN, 5-TSSOP, SOT-353, SC-70-5, SOT-753, SC-74A, DSBGA, 5-XFBGA, 4-XFDFN Exposed Pad, 6-XFDFN, SOT-553 |
| Supplier Device Package | SC-70-5 | 6-SON, SC-70-5, SOT-23-5, 5-DSBGA (1.4x0.9), 4-X2SON, 6-SON (1x1), SOT-5 |
| Supplier Device Package | - | 0.8 - 1 |
| Supplier Device Package | - | 0.8 - 1.45 |
| Voltage - Supply [Max] | 5.5 V | 5.5 V |
| Voltage - Supply [Min] | 1.65 V | 1.65 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
74LVC1G00 Series
SINGLE 2-INPUT, 1.65-V TO 5.5-V NAND GATE
| Part | Input Logic Level - Low [Max] | Input Logic Level - Low [Min] | Logic Type | Input Logic Level - High [Min] | Input Logic Level - High [Max] | Package / Case | Voltage - Supply [Max] | Voltage - Supply [Min] | Number of Inputs | Operating Temperature [Max] | Operating Temperature [Min] | Current - Output High, Low [custom] | Current - Output High, Low [custom] | Supplier Device Package [y] | Supplier Device Package [x] | Supplier Device Package | Max Propagation Delay @ V, Max CL | Mounting Type | Current - Quiescent (Max) [Max] | Number of Circuits |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments SN74LVC1G00DRY2This single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean functionY =A × Bor Y =A+Bin positive logic.
The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range.
The SN74LVC1G00 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm.
This single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean functionY =A × Bor Y =A+Bin positive logic.
The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range.
The SN74LVC1G00 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm. | 0.8 V | 0.7 V | NAND Gate | 1.7 V | 2 V | 6-UFDFN | 5.5 V | 1.65 V | 2 | 125 °C | -40 °C | 32 mA | 32 mA | 1 | 1.45 | 6-SON | 4.3 ns | Surface Mount | 10 µA | 1 |
0.8 V | 0.7 V | NAND Gate | 1.7 V | 2 V | 5-TSSOP, SC-70-5, SOT-353 | 5.5 V | 1.65 V | 2 | 125 °C | -40 °C | 32 mA | 32 mA | SC-70-5 | 4.3 ns | Surface Mount | 10 µA | 1 | |||
Texas Instruments SN74LVC1G00DCKTThis single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean functionY =A × Bor Y =A+Bin positive logic.
The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range.
The SN74LVC1G00 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm.
This single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean functionY =A × Bor Y =A+Bin positive logic.
The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range.
The SN74LVC1G00 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm. | 0.8 V | 0.7 V | NAND Gate | 1.7 V | 2 V | 5-TSSOP, SC-70-5, SOT-353 | 5.5 V | 1.65 V | 2 | 125 °C | -40 °C | 32 mA | 32 mA | SC-70-5 | 4.3 ns | Surface Mount | 10 µA | 1 | ||
Texas Instruments SN74LVC1G00DBVTG4This single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean functionY =A × Bor Y =A+Bin positive logic.
The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range.
The SN74LVC1G00 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm.
This single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean functionY =A × Bor Y =A+Bin positive logic.
The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range.
The SN74LVC1G00 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm. | 0.8 V | 0.7 V | NAND Gate | 1.7 V | 2 V | SC-74A, SOT-753 | 5.5 V | 1.65 V | 2 | 125 °C | -40 °C | 32 mA | 32 mA | SOT-23-5 | 4.3 ns | Surface Mount | 10 µA | 1 | ||
0.8 V | 0.7 V | NAND Gate | 1.7 V | 2 V | 5-XFBGA, DSBGA | 5.5 V | 1.65 V | 2 | 85 °C | -40 °C | 32 mA | 32 mA | 5-DSBGA (1.4x0.9) | 4 ns | Surface Mount | 10 µA | 1 | |||
Texas Instruments SN74LVC1G00DPWRThis single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean functionY =A × Bor Y =A+Bin positive logic.
The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range.
The SN74LVC1G00 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm.
This single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean functionY =A × Bor Y =A+Bin positive logic.
The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range.
The SN74LVC1G00 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm. | 0.8 V | 0.7 V | NAND Gate | 1.7 V | 2 V | 4-XFDFN Exposed Pad | 5.5 V | 1.65 V | 2 | 125 °C | -40 °C | 32 mA | 32 mA | 0.8 | 0.8 | 4-X2SON | 4.3 ns | Surface Mount | 10 µA | 1 |
Texas Instruments SN74LVC1G00YZPRThis single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean functionY =A × Bor Y =A+Bin positive logic.
The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range.
The SN74LVC1G00 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm.
This single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean functionY =A × Bor Y =A+Bin positive logic.
The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range.
The SN74LVC1G00 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm. | 0.8 V | 0.7 V | NAND Gate | 1.7 V | 2 V | 5-XFBGA, DSBGA | 5.5 V | 1.65 V | 2 | 85 °C | -40 °C | 32 mA | 32 mA | 5-DSBGA (1.4x0.9) | 4 ns | Surface Mount | 10 µA | 1 | ||
Texas Instruments SN74LVC1G00IDCKREPThis single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean function Y =A • Bor Y =A+Bin positive logic.
This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.
This single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean function Y =A • Bor Y =A+Bin positive logic.
This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry disables the outputs, preventing damaging current backflow through the device when it is powered down. | 0.8 V | 0.7 V | NAND Gate | 1.7 V | 2 V | 5-TSSOP, SC-70-5, SOT-353 | 5.5 V | 1.65 V | 2 | 85 °C | -40 °C | 32 mA | 32 mA | SC-70-5 | 4 ns | Surface Mount | 10 µA | 1 | ||
Texas Instruments SN74LVC1G00DBVTThis single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean functionY =A × Bor Y =A+Bin positive logic.
The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range.
The SN74LVC1G00 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm.
This single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean functionY =A × Bor Y =A+Bin positive logic.
The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range.
The SN74LVC1G00 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm. | 0.8 V | 0.7 V | NAND Gate | 1.7 V | 2 V | SC-74A, SOT-753 | 5.5 V | 1.65 V | 2 | 125 °C | -40 °C | 32 mA | 32 mA | SOT-23-5 | 4.3 ns | Surface Mount | 10 µA | 1 | ||
Texas Instruments SN74LVC1G00MDCKREPThis single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean function Y =A • Bor Y =A+Bin positive logic.
This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.
This single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean function Y =A • Bor Y =A+Bin positive logic.
This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry disables the outputs, preventing damaging current backflow through the device when it is powered down. | 0.8 V | 0.7 V | NAND Gate | 1.7 V | 2 V | 5-TSSOP, SC-70-5, SOT-353 | 5.5 V | 1.65 V | 2 | 125 °C | -55 °C | 32 mA | 32 mA | SC-70-5 | 5 ns | Surface Mount | 10 µA | 1 | ||
0.8 V | 0.7 V | NAND Gate | 1.7 V | 2 V | SC-74A, SOT-753 | 5.5 V | 1.65 V | 2 | 125 °C | -40 °C | 32 mA | 32 mA | SOT-23-5 | 4.3 ns | Surface Mount | 10 µA | 1 | |||
Texas Instruments SN74LVC1G00DSF2This single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean functionY =A × Bor Y =A+Bin positive logic.
The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range.
The SN74LVC1G00 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm.
This single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean functionY =A × Bor Y =A+Bin positive logic.
The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range.
The SN74LVC1G00 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm. | 0.8 V | 0.7 V | NAND Gate | 1.7 V | 2 V | 6-XFDFN | 5.5 V | 1.65 V | 2 | 125 °C | -40 °C | 32 mA | 32 mA | 6-SON (1x1) | 4.3 ns | Surface Mount | 10 µA | 1 | ||
Texas Instruments SN74LVC1G00DCKTG4This single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean functionY =A × Bor Y =A+Bin positive logic.
The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range.
The SN74LVC1G00 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm.
This single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean functionY =A × Bor Y =A+Bin positive logic.
The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range.
The SN74LVC1G00 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm. | 0.8 V | 0.7 V | NAND Gate | 1.7 V | 2 V | 5-TSSOP, SC-70-5, SOT-353 | 5.5 V | 1.65 V | 2 | 125 °C | -40 °C | 32 mA | 32 mA | SC-70-5 | 4.3 ns | Surface Mount | 10 µA | 1 | ||
Texas Instruments SN74LVC1G00DSFRThis single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean functionY =A × Bor Y =A+Bin positive logic.
The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range.
The SN74LVC1G00 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm.
This single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean functionY =A × Bor Y =A+Bin positive logic.
The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range.
The SN74LVC1G00 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm. | 0.8 V | 0.7 V | NAND Gate | 1.7 V | 2 V | 6-XFDFN | 5.5 V | 1.65 V | 2 | 125 °C | -40 °C | 32 mA | 32 mA | 6-SON (1x1) | 4.3 ns | Surface Mount | 10 µA | 1 | ||
0.8 V | 0.7 V | NAND Gate | 1.7 V | 2 V | 5-XFBGA, DSBGA | 5.5 V | 1.65 V | 2 | 85 °C | -40 °C | 32 mA | 32 mA | 5-DSBGA (1.4x0.9) | 4 ns | Surface Mount | 10 µA | 1 | |||
Texas Instruments SN74LVC1G00DRLRThis single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean functionY =A × Bor Y =A+Bin positive logic.
The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range.
The SN74LVC1G00 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm.
This single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean functionY =A × Bor Y =A+Bin positive logic.
The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range.
The SN74LVC1G00 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm. | 0.8 V | 0.7 V | NAND Gate | 1.7 V | 2 V | SOT-553 | 5.5 V | 1.65 V | 2 | 125 °C | -40 °C | 32 mA | 32 mA | SOT-5 | 4.3 ns | Surface Mount | 10 µA | 1 | ||
0.8 V | 0.7 V | NAND Gate | 1.7 V | 2 V | 5-TSSOP, SC-70-5, SOT-353 | 5.5 V | 1.65 V | 2 | 125 °C | -40 °C | 32 mA | 32 mA | SC-70-5 | 4.3 ns | Surface Mount | 10 µA | 1 | |||
Texas Instruments SN74LVC1G00MDBVREPThis single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean function Y =A • Bor Y =A+Bin positive logic.
This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.
This single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean function Y =A • Bor Y =A+Bin positive logic.
This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry disables the outputs, preventing damaging current backflow through the device when it is powered down. | 0.8 V | 0.7 V | NAND Gate | 1.7 V | 2 V | SC-74A, SOT-753 | 5.5 V | 1.65 V | 2 | 125 °C | -55 °C | 32 mA | 32 mA | SOT-23-5 | 5 ns | Surface Mount | 10 µA | 1 | ||
0.8 V | 0.7 V | NAND Gate | 1.7 V | 2 V | 5-XFBGA, DSBGA | 5.5 V | 1.65 V | 2 | 85 °C | -40 °C | 32 mA | 32 mA | 5-DSBGA (1.4x0.9) | 4 ns | Surface Mount | 10 µA | 1 | |||
Texas Instruments SN74LVC1G00DBVRG4This single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean functionY =A × Bor Y =A+Bin positive logic.
The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range.
The SN74LVC1G00 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm.
This single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean functionY =A × Bor Y =A+Bin positive logic.
The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range.
The SN74LVC1G00 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm. | 0.8 V | 0.7 V | NAND Gate | 1.7 V | 2 V | SC-74A, SOT-753 | 5.5 V | 1.65 V | 2 | 125 °C | -40 °C | 32 mA | 32 mA | SOT-23-5 | 4.3 ns | Surface Mount | 10 µA | 1 | ||
0.8 V | 0.7 V | NAND Gate | 1.7 V | 2 V | 5-TSSOP, SC-70-5, SOT-353 | 5.5 V | 1.65 V | 2 | 125 °C | -40 °C | 32 mA | 32 mA | SC-70-5 | 4.3 ns | Surface Mount | 10 µA | 1 | |||
Texas Instruments SN74LVC1G00DCKRThis single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean functionY =A × Bor Y =A+Bin positive logic.
The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range.
The SN74LVC1G00 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm.
This single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean functionY =A × Bor Y =A+Bin positive logic.
The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range.
The SN74LVC1G00 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm. | 0.8 V | 0.7 V | NAND Gate | 1.7 V | 2 V | 5-TSSOP, SC-70-5, SOT-353 | 5.5 V | 1.65 V | 2 | 125 °C | -40 °C | 32 mA | 32 mA | SC-70-5 | 4.3 ns | Surface Mount | 10 µA | 1 | ||
0.8 V | 0.7 V | NAND Gate | 1.7 V | 2 V | SC-74A, SOT-753 | 5.5 V | 1.65 V | 2 | 125 °C | -40 °C | 32 mA | 32 mA | SOT-23-5 | 4.3 ns | Surface Mount | 10 µA | 1 | |||
Texas Instruments SN74LVC1G00DRYRThis single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean functionY =A × Bor Y =A+Bin positive logic.
The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range.
The SN74LVC1G00 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm.
This single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G00 performs the Boolean functionY =A × Bor Y =A+Bin positive logic.
The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range.
The SN74LVC1G00 is available in a variety of packages, including the ultra-small DPW package with a body size of 0.8 mm × 0.8 mm. | 0.8 V | 0.7 V | NAND Gate | 1.7 V | 2 V | 6-UFDFN | 5.5 V | 1.65 V | 2 | 125 °C | -40 °C | 32 mA | 32 mA | 1 | 1.45 | 6-SON | 4.3 ns | Surface Mount | 10 µA | 1 |
0.8 V | 0.7 V | NAND Gate | 1.7 V | 2 V | 5-TSSOP, SC-70-5, SOT-353 | 5.5 V | 1.65 V | 2 | 125 °C | -40 °C | 32 mA | 32 mA | SC-70-5 | 4.3 ns | Surface Mount | 10 µA | 1 |
Description
General part information
74LVC1G00 Series
NAND Gate IC 1 Channel SC-70-5