IPC60N04S4L06ATMA1

Obsolete

Infineon Technologies

MOSFET N-CH 40V 60A TDSON-8-23

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Obsolete

Infineon Technologies

MOSFET N-CH 40V 60A TDSON-8-23

Technical Specifications

Parameters and characteristics for this part

Specification	IPC60N04S4L06ATMA1

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	3600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	63 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	5.6 mOhm
Supplier Device Package	PG-TDSON-8-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2.2 V

Part	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	FET Type	Qualification	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Supplier Device Package	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IPC60N04S4L06ATMA1	5.6 mOhm	16 V	N-Channel	AEC-Q101	3600 pF	63 W	MOSFET (Metal Oxide)	43 nC	40 V	2.2 V	8-PowerTDFN	4.5 V 10 V	-55 °C	175 ░C	Automotive	PG-TDSON-8-23	Surface Mount	60 A
Infineon Technologies IPC60N04S406ATMA1		20 V	N-Channel	AEC-Q101		63 W	MOSFET (Metal Oxide)		40 V	4 V	8-PowerTDFN	10 V	-55 °C	175 ░C	Automotive	PG-TDSON-8-23	Surface Mount	60 A	6 mOhm	2650 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 60A (Tc) 63W (Tc) Surface Mount PG-TDSON-8-23

Technical documentation and resources