MOSFET N-CH 40V 60A TDSON-8-23
| Part | Rds On (Max) @ Id, Vgs [Max] | Vgs (Max) | FET Type | Qualification | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Technology | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Grade | Supplier Device Package | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 5.6 mOhm | 16 V | N-Channel | AEC-Q101 | 3600 pF | 63 W | MOSFET (Metal Oxide) | 43 nC | 40 V | 2.2 V | 8-PowerTDFN | 4.5 V 10 V | -55 °C | 175 ░C | Automotive | PG-TDSON-8-23 | Surface Mount | 60 A | ||
Infineon Technologies | 20 V | N-Channel | AEC-Q101 | 63 W | MOSFET (Metal Oxide) | 40 V | 4 V | 8-PowerTDFN | 10 V | -55 °C | 175 ░C | Automotive | PG-TDSON-8-23 | Surface Mount | 60 A | 6 mOhm | 2650 pF |