Specification	RN1104,LF(CT

Current - Collector (Ic) (Max)	0.1 mA
Current - Collector Cutoff (Max)	500 nA
DC Current Gain (hFE) (Min)	80
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-416, SC-75
Package Name	SSM
Power - Max	100 mW
Resistor - Base (R1) Resistance	47 kOhm
Resistor - Emitter Base (R2)	47 kOhm
Transistor Type	Pre-Biased, NPN
Vce Saturation (Max)	300 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

RN1104 Series

Bipolar Transistors, NPN Bias Resistor Built-in Transistors (BRT), 47 kΩ/47 kΩ, SOT-723(VESM)

Part	Resistor - Base (R1) Resistance	Current - Collector (Ic) (Max)	Power - Max	Resistor - Emitter Base (R2)	Package Name	Current - Collector Cutoff (Max)	Package / Case	Vce Saturation (Max)	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	DC Current Gain (hFE) (Min)	Frequency - Transition
Toshiba Semiconductor and Storage RN1104MFV,L3F	47 kOhm	0.1 mA	150 mW	47 kOhm	VESM	500 nA	SOT-723	300 mV	NPN Pre-Biased	50 V	Surface Mount	80
Toshiba Semiconductor and Storage RN1104,LF(CT	47 kOhm	0.1 mA	100 mW	47 kOhm	SSM	500 nA	SC-75 SOT-416	300 mV	NPN Pre-Biased	50 V	Surface Mount	80	250 MHz
Toshiba Semiconductor and Storage RN1104MFV,L3F(CT	47 kOhm	0.1 mA	150 mW	47 kOhm	VESM	500 nA	SOT-723	300 mV	NPN Pre-Biased	50 V	Surface Mount	80
Toshiba Semiconductor and Storage RN1104T5LFT	47 kOhm	0.1 mA	100 mW	47 kOhm	SSM	500 nA	SC-75 SOT-416	300 mV	NPN Pre-Biased	50 V	Surface Mount	80	250 MHz
Toshiba Semiconductor and Storage RN1104ACT(TPL3)	47 kOhm	0.08 A	100 mW	47 kOhm	CST3	500 nA	SC-101 SOT-883	150 mV	NPN Pre-Biased	50 V	Surface Mount	80

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