RN1104T5LFT

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

Technical Specifications

Parameters and characteristics for this part

Specification	RN1104T5LFT

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Power - Max [Max]	100 mW
Resistor - Base (R1)	47 kOhms
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	SSM
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Transistor Type	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Resistor - Base (R1)	Mounting Type	Resistor - Emitter Base (R2)	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case
Toshiba Semiconductor and Storage RN1104,LF(CT	NPN - Pre-Biased	250 MHz	50 V	100 mW	SSM	500 nA	300 mV	47 kOhms	Surface Mount	47000 Ohms	100 mA	80	SC-75 SOT-416
Toshiba Semiconductor and Storage RN1104T5LFT	NPN - Pre-Biased	250 MHz	50 V	100 mW	SSM	500 nA	300 mV	47 kOhms	Surface Mount	47000 Ohms	100 mA	80	SC-75 SOT-416

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General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SSM

Technical documentation and resources