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DMTH6009LK3Q-13 - TO-252-2

DMTH6009LK3Q-13

Active
Diodes Inc

60V 59A 10MΩ@10V,59A 60W 1 N-CHANNEL TO-252 MOSFETS ROHS

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DMTH6009LK3Q-13 - TO-252-2

DMTH6009LK3Q-13

Active
Diodes Inc

60V 59A 10MΩ@10V,59A 60W 1 N-CHANNEL TO-252 MOSFETS ROHS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMTH6009LK3Q-13
Current - Continuous Drain (Id) @ 25°C59 A, 14.2 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs33.5 nC
Input Capacitance (Ciss) (Max) @ Vds1925 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)60 W, 3.2 W
Rds On (Max) @ Id, Vgs10 mOhm
Supplier Device PackageTO-252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.23
10$ 1.01
100$ 0.78
500$ 0.66
1000$ 0.54
Digi-Reel® 1$ 1.23
10$ 1.01
100$ 0.78
500$ 0.66
1000$ 0.54
Tape & Reel (TR) 2500$ 0.51
5000$ 0.48
LCSCPiece 1$ 1.19
10$ 1.16
30$ 1.15
100$ 1.13

Description

General part information

DMTH6009LK3Q Series

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON)and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.

Documents

Technical documentation and resources