DMTH6009LK3Q Series

60V 175°C N-Channel Enhancement Mode MOSFET

Catalog

60V 175°C N-Channel Enhancement Mode MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Technology	Mounting Type	Vgs (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
Diodes Inc DMTH6009LK3Q-13	-55 °C	175 ░C	1925 pF	3.2 W 60 W	14.2 A 59 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 V	N-Channel	2 V	MOSFET (Metal Oxide)	Surface Mount	20 V	TO-252-3	4.5 V 10 V	10 mOhm	33.5 nC

Catalog

60V 175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• Low RDS(ON)– Ensures On-State Losses Are Minimized

• Excellent Qgdx RDS(ON)Product (FOM)

• Advanced Technology for DC/DC Converters

• Small Form Factor Thermally Efficient Package Enables Higher Density End Products

Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON)and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.