IPI60R199CPXKSA1

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Infineon Technologies

MOSFET N-CH 600V 16A TO262-3

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Infineon Technologies

MOSFET N-CH 600V 16A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPI60R199CPXKSA1

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43 nC
Input Capacitance (Ciss) (Max) @ Vds	1520 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	139 W
Rds On (Max) @ Id, Vgs	199 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPI60R199CPXKSA1	Through Hole	-55 °C	150 °C	1520 pF	I2PAK TO-262-3 Long Leads TO-262AA	16 A	N-Channel	600 V	10 V	139 W	MOSFET (Metal Oxide)	20 V	199 mOhm	PG-TO262-3	3.5 V	43 nC
Infineon Technologies IPI60R199CPXKSA2	Through Hole	-55 °C	150 °C	1520 pF	I2PAK TO-262-3 Long Leads TO-262AA	16 A	N-Channel	600 V	10 V	139 W	MOSFET (Metal Oxide)	20 V	199 mOhm		3.5 V	43 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 16A (Tc) 139W (Tc) Through Hole PG-TO262-3

Technical documentation and resources

No documents available