IPI60R199 Series

Catalog

MOSFET N-CH 600V 16A TO262-3

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPI60R199CPXKSA1	Through Hole	-55 °C	150 °C	1520 pF	I2PAK TO-262-3 Long Leads TO-262AA	16 A	N-Channel	600 V	10 V	139 W	MOSFET (Metal Oxide)	20 V	199 mOhm	PG-TO262-3	3.5 V	43 nC
Infineon Technologies IPI60R199CPXKSA2	Through Hole	-55 °C	150 °C	1520 pF	I2PAK TO-262-3 Long Leads TO-262AA	16 A	N-Channel	600 V	10 V	139 W	MOSFET (Metal Oxide)	20 V	199 mOhm		3.5 V	43 nC