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DMT8008LFG-13 - PowerDI3333-8

DMT8008LFG-13

Active
Diodes Inc

80V N-CHANNEL ENHANCEMENT MODE MOSFET

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DMT8008LFG-13 - PowerDI3333-8

DMT8008LFG-13

Active
Diodes Inc

80V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMT8008LFG-13
Current - Continuous Drain (Id) @ 25°C16 A, 48 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs37.7 nC
Input Capacitance (Ciss) (Max) @ Vds2254 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)1 W, 23.5 W
Rds On (Max) @ Id, Vgs6.9 mOhm
Supplier Device PackagePOWERDI3333-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 0.54
6000$ 0.52

Description

General part information

DMT8008LFG Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.

Documents

Technical documentation and resources