DMT8008LFG Series

30V N-Channel Enhancement Mode MOSFET

Catalog

30V N-Channel Enhancement Mode MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id
Diodes Inc DMT8008LFG-7	-55 °C	150 °C	2.5 V	6.9 mOhm	37.7 nC	MOSFET (Metal Oxide)	Surface Mount	4.5 V 10 V	80 V	N-Channel	16 A 48 A	8-PowerVDFN	20 V	1 W 23.5 W	2254 pF	POWERDI3333-8
Diodes Inc DMT8008LFG-13	-55 °C	150 °C	2.5 V	6.9 mOhm	37.7 nC	MOSFET (Metal Oxide)	Surface Mount	4.5 V 10 V	80 V	N-Channel	16 A 48 A	8-PowerVDFN	20 V	1 W 23.5 W	2254 pF	POWERDI3333-8
Diodes Inc DMT30M9LPS-13	-55 °C	150 °C			160.5 nC	MOSFET (Metal Oxide)	Surface Mount	4.5 V 10 V	30 V	N-Channel	100 A	8-PowerTDFN	20 V	2.6 W	12121 pF	PowerDI5060-8 (Type K)	1 mOhm	3 V

Catalog

30V N-Channel Enhancement Mode MOSFET

Key Features

• Low RDS(ON) – Ensures On-State Losses are Minimized

• Excellent Qgd × RDS(ON) Product (FOM)

• Advanced Technology for DC-DC Converts

• Small Form Factor Thermally Efficient Package Enables Higher Density End Products

• Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.