Specification	SSM6J424TU,LF

Current - Continuous Drain (Id) (Ta)	6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	23.1 nC
Input Capacitance (Ciss) (Max)	1650 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	Flat Leads, 6-SMD
Package Name	UF6
Power Dissipation (Max)	1 W
Rds On (Max)	22.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-8 V
Vgs (Max) Positive	6 V
Vgs(th) (Max)	1 V

SSM6J424TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -6.0 A, 0.0225 Ω@4.5V, SOT-363F(UF6)

Part	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max) Positive	Vgs (Max) Negative	Mounting Type	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Package Name	Rds On (Max)	FET Type	Vgs(th) (Max)	Technology	Current - Continuous Drain (Id) (Ta)	Gate Charge (Max)	Package / Case	Operating Temperature
Toshiba Semiconductor and Storage SSM6J424TU,LF	4.5 V	1.5 V	20 V	6 V	-8 V	Surface Mount	1650 pF	1 W	UF6	22.5 mOhm	P-Channel	1 V	MOSFET (Metal Oxide)	6 A	23.1 nC	6-SMD Flat Leads	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources