Beta
⌘K
MOSFET P-CH 20V 6A UF6
| Part | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Vgs (Max) [Max] | Vgs (Max) [Min] | Drain to Source Voltage (Vdss) | Operating Temperature | Supplier Device Package | Package / Case | Current - Continuous Drain (Id) @ 25°C | FET Type | Technology | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 1650 pF | 22.5 mOhm | 1 W | 6 V | -8 V | 20 V | 150 °C | UF6 | 6-SMD Flat Leads | 6 A | P-Channel | MOSFET (Metal Oxide) | 1 V | 1.5 V 4.5 V | Surface Mount |