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BSZ014NE2LS5IFATMA1 - TSDSON-8

BSZ014NE2LS5IFATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 25 V ; PQFN 3.3 X 3.3 PACKAGE; 1.45 MOHM; MONOLITHICALLY INTEGRATED SCHOTTKY-LIKE DIODE

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BSZ014NE2LS5IFATMA1 - TSDSON-8

BSZ014NE2LS5IFATMA1

Active
Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 25 V ; PQFN 3.3 X 3.3 PACKAGE; 1.45 MOHM; MONOLITHICALLY INTEGRATED SCHOTTKY-LIKE DIODE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSZ014NE2LS5IFATMA1
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET FeatureSchottky Diode (Body)
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds2300 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)69 W, 2.1 W
Rds On (Max) @ Id, Vgs1.45 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.93
10$ 1.25
100$ 0.86
500$ 0.80
Digi-Reel® 1$ 1.93
10$ 1.25
100$ 0.86
500$ 0.80
Tape & Reel (TR) 5000$ 0.80

Description

General part information

BSZ014 Series

With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation.

Documents

Technical documentation and resources

No documents available