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OPTIMOS™ 5 N-CHANNEL POWER MOSFET 25 V ; PQFN 3.3 X 3.3 PACKAGE; 1.45 MOHM; MONOLITHICALLY INTEGRATED SCHOTTKY-LIKE DIODE
| Part | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Technology | Mounting Type | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Package / Case | FET Feature | Vgs(th) (Max) @ Id | FET Type | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2300 pF | 25 V | MOSFET (Metal Oxide) | Surface Mount | 2.1 W 69 W | 4.5 V 10 V | -55 °C | 150 °C | 16 V | 8-PowerTDFN | Schottky Diode (Body) | 2 V | N-Channel | 1.45 mOhm |