IXTQ200N06P

Obsolete

IXYS

MOSFET N-CH 60V 200A TO3P

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Obsolete

IXYS

MOSFET N-CH 60V 200A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	IXTQ200N06P

Current - Continuous Drain (Id) @ 25°C	200 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	200 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max) [Max]	714 W
Rds On (Max) @ Id, Vgs	5 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology	Power Dissipation (Max) [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
IXYS IXTQ200N06P	5400 pF	200 nC	5 V	-55 °C	175 ░C	10 V	SC-65-3 TO-3P-3	MOSFET (Metal Oxide)	714 W	Through Hole	60 V	TO-3P	20 V	N-Channel	200 A	5 mOhm
IXYS IXTQ200N075T			4 V	-55 °C	175 ░C	10 V	SC-65-3 TO-3P-3	MOSFET (Metal Oxide)	430 W	Through Hole	75 V	TO-3P	20 V	N-Channel	200 A	5 mOhm	6800 pF	160 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 200A (Tc) 714W (Tc) Through Hole TO-3P

Technical documentation and resources

No documents available