IXTQ200 Series

Manufacturer: IXYS

Catalog

MOSFET N-CH 60V 200A TO3P

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology	Power Dissipation (Max) [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
IXYS IXTQ200N06P	5400 pF	200 nC	5 V	-55 °C	175 ░C	10 V	SC-65-3 TO-3P-3	MOSFET (Metal Oxide)	714 W	Through Hole	60 V	TO-3P	20 V	N-Channel	200 A	5 mOhm
IXYS IXTQ200N075T			4 V	-55 °C	175 ░C	10 V	SC-65-3 TO-3P-3	MOSFET (Metal Oxide)	430 W	Through Hole	75 V	TO-3P	20 V	N-Channel	200 A	5 mOhm	6800 pF	160 nC