CSD23202W10T
Active-12-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1 MM X 1 MM, 53 MOHM, GATE ESD PROTECTION
CSD23202W10T
Active-12-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1 MM X 1 MM, 53 MOHM, GATE ESD PROTECTION
Description
General part information
CSD23202 Series
This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small 1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile.
This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small 1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile.
Technical Specifications
Parameters and characteristics for this part
| Specification | CSD23202W10T |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 2.2 A |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On) | 1.5 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 3.8 nC |
| Input Capacitance (Ciss) (Max) | 512 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 4-UFBGA, DSBGA |
| Package Length | 1 mm |
| Package Name | 4-DSBGA |
| Package Width | 1 mm |
| Power Dissipation (Max) | 1 W |
| Rds On (Max) | 53 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | -6 V |
| Vgs(th) (Max) | 900 mV |
Pricing
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