IPB180P04P4L02AUMA2

Obsolete

Infineon Technologies

MOSFET

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IPB180P04P4L02AUMA2

Obsolete

Infineon Technologies

MOSFET

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB180P04P4L02AUMA2

Current - Continuous Drain (Id) @ 25°C	180 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	286 nC
Input Capacitance (Ciss) (Max) @ Vds	18700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	2.4 mOhm
Supplier Device Package	PG-TO263-7-3
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	5 V
Vgs (Max) [Min]	-16 V
Vgs(th) (Max) @ Id	2.2 V

IPB180 Series

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Vgs (Max) [Max]	Vgs (Max) [Min]	Qualification	Power Dissipation (Max) [Max]	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IPB180P04P4L02ATMA1	P-Channel	18700 pF	MOSFET (Metal Oxide)	16 V	PG-TO263-7-3	180 A	2.4 mOhm	-55 °C	175 ░C	Surface Mount	40 V	4.5 V 10 V	286 nC	D2PAK TO-263-7	150 W	2.2 V
Infineon Technologies IPB180P04P4L02AUMA2	P-Channel	18700 pF	MOSFET (Metal Oxide)		PG-TO263-7-3	180 A	2.4 mOhm	-55 °C	175 ░C	Surface Mount	40 V	4.5 V 10 V	286 nC	D2PAK TO-263-7	150 W	2.2 V	5 V	-16 V
Infineon Technologies IPB180N06S4H1ATMA2	N-Channel	21900 pF	MOSFET (Metal Oxide)	20 V	PG-TO263-7	180 A	1.7 mOhm	-55 °C	175 ░C	Surface Mount	60 V	10 V	270 nC	D2PAK TO-263-7		4 V			AEC-Q101	250 W	Automotive
Infineon Technologies IPB180N03S4LH0ATMA1	N-Channel	23000 pF	MOSFET (Metal Oxide)	16 V	PG-TO263-7-3	180 A	0.95 mOhm	-55 °C	175 ░C	Surface Mount	30 V	4.5 V 10 V		D2PAK TO-263-7		2.2 V				250 W		300 nC
Infineon Technologies IPB180N10S403ATMA1	N-Channel	10120 pF	MOSFET (Metal Oxide)	20 V	PG-TO263-7-3	180 A		-55 °C	175 ░C	Surface Mount	100 V	10 V		D2PAK TO-263-7		3.5 V			AEC-Q101	250 W	Automotive	140 nC	3.3 mOhm
Infineon Technologies IPB180P04P403ATMA2	P-Channel	17640 pF	MOSFET (Metal Oxide)	20 V	PG-TO263-7-3	180 A		-55 °C	175 ░C	Surface Mount	40 V			D2PAK TO-263-7	150 W	4 V			AEC-Q101		Automotive		2.8 mOhm
Infineon Technologies IPB180N04S4L01ATMA1	N-Channel	19100 pF	MOSFET (Metal Oxide)	-16 V 20 V	PG-TO263-7-3	180 A	1.2 mOhm	-55 °C	175 ░C	Surface Mount	40 V	4.5 V 10 V	245 nC	D2PAK TO-263-7	188 W	2.2 V			AEC-Q101		Automotive
Infineon Technologies IPB180N08S402ATMA1	N-Channel	11550 pF	MOSFET (Metal Oxide)	20 V	PG-TO263-7-3	180 A	2.2 mOhm	-55 °C	175 ░C	Surface Mount	80 V	10 V	167 nC	D2PAK TO-263-7	277 W	4 V			AEC-Q101		Automotive
Infineon Technologies IPB180N06S4H1ATMA1	N-Channel	21900 pF	MOSFET (Metal Oxide)	20 V	PG-TO263-7-3	180 A	1.7 mOhm	-55 °C	175 ░C	Surface Mount	60 V	10 V	270 nC	D2PAK TO-263-7		4 V				250 W
Infineon Technologies IPB180N04S400ATMA1	N-Channel	22880 pF	MOSFET (Metal Oxide)	20 V	PG-TO263-7-3	180 A	0.98 mOhm	-55 °C	175 ░C	Surface Mount	40 V	10 V	286 nC	D2PAK TO-263-7		4 V				300 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPB180 Series

P-Channel 40 V 180A (Tc) 150W (Tc) Surface Mount PG-TO263-7-3

Documents

Technical documentation and resources

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