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IPB180N04S400ATMA1 - TO-263-7, D2Pak

IPB180N04S400ATMA1

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Infineon Technologies

IPB180N04S4-00 IS AN AUTOMOTIVE MOSFET OFFERING 40V, N-CH, 0.98 MΩ MAX, D2PAK 7PIN, OPTIMOS™-T2, AEC QUALIFIED, MSL1, 175°C, ROHS COMPLIANT, ULTRA LOW RDS(ON).

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IPB180N04S400ATMA1 - TO-263-7, D2Pak

IPB180N04S400ATMA1

Active
Infineon Technologies

IPB180N04S4-00 IS AN AUTOMOTIVE MOSFET OFFERING 40V, N-CH, 0.98 MΩ MAX, D2PAK 7PIN, OPTIMOS™-T2, AEC QUALIFIED, MSL1, 175°C, ROHS COMPLIANT, ULTRA LOW RDS(ON).

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Technical Specifications

Parameters and characteristics for this part

SpecificationIPB180N04S400ATMA1
Current - Continuous Drain (Id) @ 25°C180 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs286 nC
Input Capacitance (Ciss) (Max) @ Vds22880 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-263-7, D2PAK
Power Dissipation (Max) [Max]300 W
Rds On (Max) @ Id, Vgs0.98 mOhm
Supplier Device PackagePG-TO263-7-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

IPB180 Series

PartFET TypeInput Capacitance (Ciss) (Max) @ VdsTechnologyVgs (Max)Supplier Device PackageCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsOperating Temperature [Min]Operating Temperature [Max]Mounting TypeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Gate Charge (Qg) (Max) @ VgsPackage / CasePower Dissipation (Max)Vgs(th) (Max) @ IdVgs (Max) [Max]Vgs (Max) [Min]QualificationPower Dissipation (Max) [Max]GradeGate Charge (Qg) (Max) @ Vgs [Max]Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies
P-Channel
18700 pF
MOSFET (Metal Oxide)
16 V
PG-TO263-7-3
180 A
2.4 mOhm
-55 °C
175 ░C
Surface Mount
40 V
4.5 V
10 V
286 nC
D2PAK
TO-263-7
150 W
2.2 V
Infineon Technologies
P-Channel
18700 pF
MOSFET (Metal Oxide)
PG-TO263-7-3
180 A
2.4 mOhm
-55 °C
175 ░C
Surface Mount
40 V
4.5 V
10 V
286 nC
D2PAK
TO-263-7
150 W
2.2 V
5 V
-16 V
Infineon Technologies
N-Channel
21900 pF
MOSFET (Metal Oxide)
20 V
PG-TO263-7
180 A
1.7 mOhm
-55 °C
175 ░C
Surface Mount
60 V
10 V
270 nC
D2PAK
TO-263-7
4 V
AEC-Q101
250 W
Automotive
Infineon Technologies
N-Channel
23000 pF
MOSFET (Metal Oxide)
16 V
PG-TO263-7-3
180 A
0.95 mOhm
-55 °C
175 ░C
Surface Mount
30 V
4.5 V
10 V
D2PAK
TO-263-7
2.2 V
250 W
300 nC
Infineon Technologies
N-Channel
10120 pF
MOSFET (Metal Oxide)
20 V
PG-TO263-7-3
180 A
-55 °C
175 ░C
Surface Mount
100 V
10 V
D2PAK
TO-263-7
3.5 V
AEC-Q101
250 W
Automotive
140 nC
3.3 mOhm
Infineon Technologies
P-Channel
17640 pF
MOSFET (Metal Oxide)
20 V
PG-TO263-7-3
180 A
-55 °C
175 ░C
Surface Mount
40 V
D2PAK
TO-263-7
150 W
4 V
AEC-Q101
Automotive
2.8 mOhm
Infineon Technologies
N-Channel
19100 pF
MOSFET (Metal Oxide)
-16 V
20 V
PG-TO263-7-3
180 A
1.2 mOhm
-55 °C
175 ░C
Surface Mount
40 V
4.5 V
10 V
245 nC
D2PAK
TO-263-7
188 W
2.2 V
AEC-Q101
Automotive
Infineon Technologies
N-Channel
11550 pF
MOSFET (Metal Oxide)
20 V
PG-TO263-7-3
180 A
2.2 mOhm
-55 °C
175 ░C
Surface Mount
80 V
10 V
167 nC
D2PAK
TO-263-7
277 W
4 V
AEC-Q101
Automotive
Infineon Technologies
N-Channel
21900 pF
MOSFET (Metal Oxide)
20 V
PG-TO263-7-3
180 A
1.7 mOhm
-55 °C
175 ░C
Surface Mount
60 V
10 V
270 nC
D2PAK
TO-263-7
4 V
250 W
Infineon Technologies
N-Channel
22880 pF
MOSFET (Metal Oxide)
20 V
PG-TO263-7-3
180 A
0.98 mOhm
-55 °C
175 ░C
Surface Mount
40 V
10 V
286 nC
D2PAK
TO-263-7
4 V
300 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 5.88
10$ 3.94
100$ 2.84
500$ 2.37
Digi-Reel® 1$ 5.88
10$ 3.94
100$ 2.84
500$ 2.37
Tape & Reel (TR) 1000$ 2.35

Description

General part information

IPB180 Series

N-Channel 40 V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7-3

Documents

Technical documentation and resources