DMP2023UFDF-7

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Diodes Inc

TRANS MOSFET P-CH 20V 7.6A 6-PIN UDFN2020 T/R

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Diodes Inc

TRANS MOSFET P-CH 20V 7.6A 6-PIN UDFN2020 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	DMP2023UFDF-7

Current - Continuous Drain (Id) @ 25°C	7.6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	27 nC
Input Capacitance (Ciss) (Max) @ Vds	1837 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	730 mW
Rds On (Max) @ Id, Vgs	27 mOhm
Supplier Device Package	U-DFN2020-6 (Type F)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

20V P-Channel Enhancement Mode MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type
Diodes Inc DMP2023UFDF-7	1837 pF	27 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	7.6 A	1 V	6-UDFN Exposed Pad	1.5 V 4.5 V	8 V	730 mW	27 nC	Surface Mount	U-DFN2020-6 (Type F)	20 V	P-Channel

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General part information

20V P-Channel Enhancement Mode MOSFET

Technical documentation and resources