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20V P-Channel Enhancement Mode MOSFET
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20V P-Channel Enhancement Mode MOSFET
20V P-Channel Enhancement Mode MOSFET
| Part | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Supplier Device Package | Drain to Source Voltage (Vdss) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 1837 pF | 27 mOhm | -55 °C | 150 °C | MOSFET (Metal Oxide) | 7.6 A | 1 V | 6-UDFN Exposed Pad | 1.5 V 4.5 V | 8 V | 730 mW | 27 nC | Surface Mount | U-DFN2020-6 (Type F) | 20 V | P-Channel |