IDW30G65C5FKSA1

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Infineon Technologies

DIODE SIL CARB 650V 30A TO247-3

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Unknown

Infineon Technologies

DIODE SIL CARB 650V 30A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IDW30G65C5FKSA1

Capacitance @ Vr, F	860 pF
Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	1.1 mA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	PG-TO247-3-1
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Current - Average Rectified (Io)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Technology	Speed
Infineon Technologies IDW30G65C5FKSA1	30 A	PG-TO247-3-1	650 V	1.1 mA	860 pF	0 ns	TO-247-3	175 ░C	-55 C	Through Hole	1.7 V	SiC (Silicon Carbide) Schottky	No Recovery Time

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 650 V 30A Through Hole PG-TO247-3-1

Technical documentation and resources